Modification of diazoquinone-novolac photoresist films by boron ion implantation

ion Implantation of boron in germanium

The activation of boron implanted at room temperature into germanium has been studied. In contrast to other group III elements boron forms a p-type layer before any postl.1nplant annealIng steps. Variable temperature Hall effect measurements and deep level trans{ent spectroscopy experiments indicate that all of the boron ions are electricaHy active as shallow acceptor the en.tire dose range (5 ...

Softbake of Photoresist Films

After coating, the resist film contains a remaining solvent concentration depending on the resist, the solvent, the resist film thickness and the resist coating technique. The softbake reduces the remaining solvent content in order to: avoid mask contamination and/or sticking to the mask, prevent popping or foaming of the resist by N2 created during exposure, improve resist adhesion to the subs...

Modification of Conductivity and of Mechanical Properties of Electroactive Polymer (EAP) Thin Films by Titanium Ion Implantation

Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition

Boron nitride ~BN! thin films ~containing mixed cBN/hBN phase! have been deposited on Si~100! substrates using neutralized nitrogen beam and electron beam evaporation of boron. All as-deposited BN films were p type with a room-temperature carrier concentration in the range of 5310 to 1310 cm. The Mg-doped BN films showed carrier concentrations in the range of 1.2 310 cm to 5.2310 cm when the Mg...

The Formation of Thin Film Resistors by Ion Implantation of Metal Films